Abstract
Even though low voltage MOSFETs are fairly intrinsically robust to SEB, the high current pulses that arise in certain charge generating mechanisms may lead to circuit malfunction. In this work, for the first time, the current pulses induced by ion impacts in new generation commercial power MOSFETs are characterized by a statistical analysis. This approach allows us to evidence the existence, in these devices, of two different charge generation mechanisms. Furthermore, the capability to easily quantify these phenomena provides useful information for the design of circuits using these MOSFETs. The pulse shape and the total charge generated by the impact of an energetic ion are studied in relation to the energy and species of the ion and the applied voltage between drain and source.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
