Abstract
In Bloch line memories magnetic domain walls are used as storage loops for shift registers. A preliminary condition for device operation is to set the domain walls at given positions where they will remain stable. It is then necessary to control the wall state of these domains and to manipulate the domain heads for write and read operation. The authors present structures which have been designed and realized for that goal and the results of device operation for the preliminary step. A simple, reliable procedure for nucleating an array of parallel domains is presented. Grooving the garnet proves efficient in stabilizing the domain walls. The influence of material parameters is discussed as well as the application of this initialization procedure to further studies.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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