Abstract
A concept of a single tube high RF power amplifier was developed for ion cyclotron range of frequency (ICRF) plasma heating system. In the concept, a tetrode was used with a grounded cathode and input power to drive a control grid of the tetrode was provided by a switching circuit. As the new amplifier arrangement can eliminate a low power (10 kW level) and an intermediate power (100 kW level) tetrode amplifiers, their high voltage DC (HVDC) power supplies, and control and monitor system for these amplifiers and HVDC power supplies in a conventional high RF power source of the ICRF heating system, this new high RF power source is more flexible on frequency change and more mechanically reliable than the conventional one. A test amplifier composed of the tetrode and a field effect transistor (FET) switching circuit was constructed. The FET switching circuit was so compact that it could be mounted close to the tetrode socket. The maximum output RF power of 8.5 kW was obtained with a plate efficiency of 82% at 70 MHz. The feasibility of the single tube high RF power amplifier was experimentally proved. The plate efficiency of 82% could not be explained by the standard class-C amplification but by high efficiency amplification under assumptions of a flat-topped plate current pattern and double resonance of an output cavity at the fundamental frequency and the third higher harmonic frequency.
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