Abstract
Experimental results are given for a PMOS-controlled thyristor (PMCT). The static IA-VAK characteristics of a PMCT were measured using a programmable high power curve tracer for both forward and reverse anode-to-cathode voltage VAK at different temperatures. The characteristics are similar to the ID-VD characteristics of typical p-n junction diodes. The device has a low forward voltage drop at high-current levels, e.g. VF(AK) = 1.6 V at IA = 200 A . The dynamic behavior of the PMCT was measured in a single switch configuration under resistive loading. The transient waveforms of anode current iA, gate current iG, anode-to-cathode voltage vAK, and gate-to-anode drive voltage vGA were observed at turn-on and turn-off for power levels up to 5 kW. The measured turn-on time was 0.3 μs and the measured turn-off time was 2.2 μs. The switching power loss and the conduction power loss were 3 W and 18 W, respectively.
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