Abstract
The memory elements are described in detail for a magnetic thin film memory plane and system, which is a practical example of the fine striped memory (FSM). The present FSM element is of destructive readout (DRO) with a good margin for digit and adjacent word disturbances. The memory plane has 512 words and 72 bits with two crosspoints per bit, and has an economical manufacturing feasibility. The memory module has a 16 kbyte capacity, a good signal-to-noise ratio, and provides a read-write cycle time of 250 ns.
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