Abstract
Single-photon emitters (SPEs) are one of the building blocks in quantum information processing. Here, we report detailed experimental optical properties of the SPEs in aluminum nitride (AlN) films at 10 K. The high-quality AlN films are grown by metal–organic chemical vapor deposition on graphene/sapphire substrates, which can conquer the large lattice and thermal mismatches between the sapphire and AlN. We report the defects in AlN with a relatively high Debye–Waller factor up to ∼29% and near-perfect linear polarization SPEs with a saturation count rate of 1.43 × 10⁶ counts/s. The power-dependent second-order autocorrelation measurements are used to study the transition kinetics, which can be described using a three-level model. The polarization measurements of absorption and emission reveal the optical cycle mechanism, where a particular zero-phonon line may be excited via multiple mechanisms. This work provides some insight into the nature of the optical properties and energy-level structures of AlN defects, which pave the way to integrated on-chip quantum photonics.
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