Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs

Abstract

This paper reports the outcome of a series of reverse-bias experiments performed on commercial GaN-based green LEDs. The experimental results showed that green LEDs submitted to reverse bias i) show a time-dependent failure when they are submitted to constant (reverse) voltage stress, at a bias point smaller than the BDV; ii) experience an increase of the reverse-bias electro-luminescence signal, well-correlated with the increase of the reverse leakage current; iii) the TTF (Time-To-Failure) related to the time-dependent breakdown process has an exponential dependence on stress voltage; iv) the TTF is Weibull distributed. This work provides the first experimental demonstration of time-dependent failure of GaN LEDs.