Abstract
In this paper, the author points out that Poole-Frenkel (P-F) saturation can be experimentally observed in ultrathin tantalum oxide capacitors. Factors why P-F saturation has been difficult to observe experimentally will be discussed. P-F saturation has not been successfully observed in thick tantalum oxide capacitors. Using an annealing process at a temperature just below the crystallization temperature seems to be helpful. In addition, TiN gate seems to be much better compared to Al gate. N2O is superior to O2 as the annealing ambient.
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