Abstract
Experimental investigation optical and X-ray images sensor open-circuit voltage under different conditions of illumination had been carried out. It is established, that the open-circuit voltage of a researched sensor is much lower the calculated with the use of only carry thermoemission models. It is shown, that for correct calculation Uoc it is necessary to take into account not only recombination processes on the heterojunction centres of carriers generated in the narrowgap material, but the phenomena of tunnel jumping current carry on the located state in the widegap material space charge region.
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