Abstract

Many recent researches are focused on the diagnostic methods allowing determination of the condition of working semiconductor components (power transistors, diodes etc.). As any solid material under stresses (mechanical, temperature and electrical) the semiconductors are generating elastic waves in the case of changing conductivity state. Based on the results of experimental research, a correlation can be observed between the transition between the on and off states of a single IGBT transistor and the emitted acoustic signal. Acquisition of acoustic emission signals was obtained with use of a wide band acoustic emission sensor. The received signal initially was prepared by AD input card with amplifier and then were recorded by means of a computer software. Acquired data were exported the to a file, which enabled further processing of the measured signals. The aim of the study was to determine the acoustic emission background signal coming from switching IGBT transistor and preparation of frequency response. The results of analysis will be used as a reference point for a further investigation of early-stage faults of semiconductors elements.

Highlights

  • 1.1 Goal and object of the studyOne of the most wanted feature of modern power electronics devices and power electronic systems operating in high-reliability systems is the possibility of early-stage failure detection

  • The IGBT transistors are meant for operation of medium frequency power electronics circuits and are capable of high voltages and currents switching, which results in a significant power dissipation in their volume

  • Due to the nature of medium and high frequency switching circuits only two states of operation of the IGBT transistor are considered for measurement and testing of acoustic emission signals

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Summary

Goal and object of the study

One of the most wanted feature of modern power electronics devices and power electronic systems operating in high-reliability systems is the possibility of early-stage failure detection. Taking care of the quality of equipment and its maintenance, an important factor is their diagnostics and the earliest possible detection of damages occurring in the modules and parts. The ideal case would be to anticipate the failure of a device with enough time to take remedial action. Development and creation of a diagnostic system for power electronic devices, based on acoustic emission sensors has begun. As the first object of research IGBT monolithic transistors were chosen [1]

Examples of IGBT transistor applications
Structure of the IGBT transistor
The measurement layout
Measure and results
Conclusions
Full Text
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