Abstract
This paper investigates intermodultation distortion in ferroelectric phase shifters depending on bias voltage. Two analog phase shifters based on barium-strontium-titantate (BST) coated sapphire substrates have been fabricated with interdigital capacitors (IDCs) which have 2 and 4μm spacing between adjacent fingers. In case of the phase shifter with 4μm-spaced IDCs, a phase shift of more than 121° was obtained with a maximum insertion loss of 1.8 dB from 2.4 to 2.5 GHz over a bias voltage range of 0-140 V. The phase shifter with 2μm-spaced IDCs exhibited a phase shift of more than 135° with a maximum insertion loss of 2.37 dB in the same frequency range. In this case. a bias voltage of 80 V was used. Using 2 and 4μm-spaced phase shifters, a third-order intermodulation (IM3) measurement was carried out with a two-tone cancellation setup to investigate nonlinearity, resulting in an input third-order intercept point (IIP3) of about 30.5 dBm and 38.5 dBm, respectively.
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