Abstract

WEDM and fixed abrasive diamond wire saw are two widely used technologies for cutting silicon ingot in semiconductor industry. When semiconductor is sliced by using WEDM method, although the wire electrode is in contact with workpiece, the processing can still be carried on. This phenomena is different from when the metal is sliced. In this study, a hybrid machining method that combines wire electrical discharge machining(WEDM) and fixed abrasive diamond wire saw into one single process is investigated experimentally. The experimental results show that hybrid machining method can combine the advantages of the two machining methods while avoiding their technical limitations. Compared with wire saw method, hybrid machining method can reduce the scratches of silicon surface and tool wear, and restrain the residual of carbon element. Compared with WEDM, the hybrid machining method can improve the cutting efficiency, reduce the surface roughness and kerf width, and eliminate the recast layer and the surface heat affected zone. It can also affect the surface wettability, which is one of the important surface properties of solid surface. This research will be able to provide a new alternative approach in the field of semiconductor cutting technology.

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