Abstract
In this paper, a single particle irradiation experiment is performed on the 600 V trench insulated gate bipolar transistor for the first time. The experimental results show that, at the collector voltages of 100 V and 300 V, single event gate rupture occurs in the device under the linear energy transfer of 81.35 MeV cm2/g. The damage occurs in the gate oxide layer near the bottom of the trench gate. The simulation results show that the holes accumulated at the bottom of the trench gate increase the electric field under irradiation, which causes the failure of the gate oxide. Furthermore, the hardening device structure is proposed by increasing the thickness of the bottom gate oxide.
Highlights
In this paper, a single particle irradiation experiment on the 600 V trench gate insulate gate bipolar transistor (IGBT) device is carried out for the first time
The single event gate rupture (SEGR) of IGBTs under off-state high collector voltage conditions is studied in detail
It contains a parasitic p–n–p structure composed of a P+ region at the anode, an N-type drift region, and a P-body region and a parasitic n–p–n structure comprising an N-type drift region, a P-body region, and an N+ region at the cathode
Summary
A single particle irradiation experiment on the 600 V trench gate IGBT device is carried out for the first time. Real-time monitoring of the current changes of the collector, gate, and emitter of the device under experiment is operated during single particle irradiation. For the device in the first group, a single particle irradiation experiment was performed at the collector voltage of 100 V.
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