Abstract
In this report, we experimentally investigate nonlinearity of PIN photodiode as a function of incident light power with different bias. It is found that the nonlinearity can be related with effective resistance of this device itself. According to ambipolar diffusion model, the resistance is divided into two parts, i.e. intrinsic region resistance and series resistance originating from non-Ohmic contact. Forward Current ( I f)–Voltage( V f) plots indicate that fabrication of high-quality Ohmic contact is necessary to improve linear performance for PIN photodiodes.
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