Abstract
Decay process of photo-generated carrier density in a saturable absorber (SA) section made of a separate confinement hetrostructure (SCH) waveguide with multiple quantum wells for passively mode-locked monolithic laser diode (MLLD) has been investigated experimentally by means of the pulse mixing method. The measured sample is a realistic SA device, which was cleaved off from the wafer used for the MLLD fabrication. It was found out that the hole accumulation at a SCH interface plays a major role in the dynamics. While the backward and forward carrier flows from the accumulation layer are critical issues, the electric field screening effect on the carrier dynamics is rather small. Numerical simulation based on a new SA model containing these carrier flows and three time constants was performed and was found out to agree quite well with results of the pulse mixing experiment, indicating the appropriateness of the new model.
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