Abstract
The transverse spontaneous emission is used to characterize the gain suppression in semiconductor lasers during their operation for the first time. The carrier heating and the spectral-hole-burning are distinguished by using their different spectral behavior. The measurements show a very strong carrier heating in strained multi-quantum-well lasers which do not appear in bulk devices. Moreover, the total nonlinear gain coefficient is measured by using a modulation method; the results show a high value of ε=16.10−17 cm3 for the strained multi quantum-well laser and an usual value of ε=2.10−17 cm3 for the bulk, consistent with the measurement of gain suppression spectrum.
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