Abstract
The excess 1/f low-frequency noise in 4H–SiC p+–n–n+ junctions has been investigated experimentally at room temperature. The main noise sources observed in these junctions were attributed to carrier recombination at the sidewall surface of the mesa structure for forward currents below 5 × 10−7 A and to mobility fluctuations in the depletion region of the junction for higher currents. From analysis of the noise data, the density of surface states and the Hooge factor, characterization of the surface and the bulk quality of the diode, respectively, was determined.
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