Abstract
In this article, the impact in FDSOI technology, of ground plane and buried oxide (BOX) size on the robustness and on the NMOS triggering voltage (Vt1) is shown. We show experimentally that firstly thin BOX devices are more robust than thick BOX devices and secondly with a higher Vt1, thin BOX device purposes a larger range to trigger ESD network and to optimize design.
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