Abstract
The hot carrier cell (HCSCs) is a promising advanced photovoltaic concept. It aims to minimize major losses in p-n junction solar cells and is predicted to have energy conversion efficiency over 65% at one sun. Energy selective contacts (ESCs) is a critical component of the HCSC. In this paper, potential of ESCs based on quantum dot and quantum well double barrier resonant tunneling structures is presented. Results of I-V measurements these show negative differential resistance (NDR) characteristics both at low temperature and room temperature, thus indicating that these structures can be suitable for ESC application.
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