Abstract
In this paper, the origin of Si(SiGe) growth instabilities has been experimentally addressed. Depending on the growth conditions (Ge concentration, growth temperature, thickness), various growth instability regimes were observed: pure kinetic regime, kinetically activated strain-induced regime and pure strain-driven regime. Also by comparing morphological evolution of layers grown either on nominal or on vicinal (001) and (111) surfaces, the important role of nature and density of surface steps was evidenced. In the end, some examples are given to illustrate the potential use of self-patterned substrates by means of different Si (SiGe) growth instabilities as templates for Ge islands ordering.
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