Abstract
AbstractAngular resolved XPS (ARXPS) makes it possible to determine film thicknesses, attenuation lengths of photoelectrons and depth profiles of compositions. The usual algorithms for evaluating thin film results (rectangular depth profile of composition) do not account for influences of count‐rate statistics, finite solid angle of electron acceptance, elastic scattering of electrons and surface roughness on the results. Computer simulations of ARXPS performed on specimens with rectangular depth profiles provide a better understanding of deviations from expected depth responses of composition due to these influences. The dominant influence of surface roughness on the results is demonstrated by a comparison of ARXPS performed on SiO2‐films on monocrystalline and on polycrystalline Si‐wafers.
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