Abstract
We studied the hole trapping characteristics of the charge trapping type memory capacitors with a blocking oxide-SiCN-tunneling oxide stacked film using the constant-current hole injection method. We evaluated the charge centroid of holes trapped in the SiCN and silicon nitride charge trapping films. The charge centroid was initially located around 11 nm in 31.6-nm-thick SiCN film and 13 nm in 30.4-nm-thick silicon nitride film, and then moved toward the blocking oxide-charge trapping film interface.
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