Abstract
Here comes a report on the investigation of the energy transfer in InP-based tunnel injection structures, consisting of InAs∕InAlGaAs quantum dashes (QDashes) and an InGaAs∕InAlGaAs quantum well (QW), designed for 1.55μm emission at room temperature. Temperature dependent photoluminescence excitation (PLE) spectroscopy was used to experimentally confirm that the carriers created in the well reach the quantum dash layer by the tunneling through a thin InAlAs∕InAlGaAs barrier and recombine there radiatively. A measurable QW-QDash energy transfer has been detected up to 130K. The electronic structure of the whole complex system obtained by modulation spectroscopy exhibits full conformity with the PLE measurement results.
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