Abstract

Theoretical evidence of VO−Zni to be a native donor in bulk ZnO has been under debate. To resolve the issue, we annealed several pieces of as grown zinc rich n-type ZnO thin film having ND ∼ 3.26 × 1017 cm−3 grown by molecular beam epitaxy on Si (001) substrate in oxygen environment at 500°C – 800°C, keeping a step of 100°C for one hour, each. Room temperature Hall measurements demonstrated that free donor concentration decreased exponentially and Arrhenius plot yielded activation energy to be 1.2±0.02 eV. This value is in an agreement with the theoretically reported activation energy of VO−Zni donor complex in ZnO.

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