Abstract
Reports the study on the deuterium effect on the degradation of gate oxide under both channel hot electron (CHE) stress condition and Fowler-Nordheim (F-N) stress condition using n-MOSFETs having the deuterated gate oxides. The suppression of both interface-state generation and stress-induced leakage current (SILC) by the deuterium pyrogenic oxidation has been found not only under F-N stress condition but also under hot-hole injection condition. This result indicates that hydrogen-release process in SiO/sub 2/ correlates to the origin of SILC generation.
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