Experimental evidence of hydrogen-related SILC generation in thin gate oxide

Y Mitani,H Satake,A Toriumi

doi:10.1109/iedm.2001.979449

Experimental evidence of hydrogen-related SILC generation in thin gate oxide

Y Mitani, H Satake + Show 1 more

https://doi.org/10.1109/iedm.2001.979449

Copy DOI

Publication Date: Dec 2, 2001

Citations: 3

Affiliation: Toshiba (Japan), Tokyo University of Science

#Stress-induced Leakage Current #Stress-induced Leakage Current Generation + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

Reports the study on the deuterium effect on the degradation of gate oxide under both channel hot electron (CHE) stress condition and Fowler-Nordheim (F-N) stress condition using n-MOSFETs having the deuterated gate oxides. The suppression of both interface-state generation and stress-induced leakage current (SILC) by the deuterium pyrogenic oxidation has been found not only under F-N stress condition but also under hot-hole injection condition. This result indicates that hydrogen-release process in SiO/sub 2/ correlates to the origin of SILC generation.

Full Text