Abstract
We have studied the confinement effect on the ground state of the n=1 heavy exciton in In x Ga 1-x As/InP Multi Quantum Wells (MQW) grown by Chemical Beam Epitaxy (CBE). Absorption optical spectra obtained in the excitonic region on several MQW were analyzed as a function of the well thickness L z , ranging in the interval 25-80 A, and as a function of the temperature (8-300 K). In agreement with the theory, a clear enhancement of the oscillator strength calculated by the integrated area of the heavy exciton absorption peak with the well thickness decrease, has been observed; such increase is a direct evidence of the exciton wavefunction shrinkage and is one of the firstly reported in In x Ga 1-x As/InP MQW. The ratio between 1s light and heavy exciton absorption area was used to evaluate their related reduced mass ratio μ 1h /μ hh =1.36±0.075 in excellent agreement with the calculated one (1-35)
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
