Abstract
We studied GaAs–Al0.3Ga0.7As intentionally disordered semiconductor superlattices with and without correlation of the disorder. The structural properties have been characterized by X-ray diffraction. The electronic states of the SL have been studied by photovoltage spectroscopy and compared with theoretical calculation of the miniband structure and transmission coefficient. We observed that delocalization processes take place when the disorder is correlated, confirming the theoretical expectations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.