Abstract
Carrier leakage processes are shown experimentally as one of the factors contributing to the temperature sensitivity of InGaAsN quantum well lasers. The utilization of the direct barriers of GaAs0.85P0.15 instead of GaAs, surrounding the InGaAsN quantum-well (QW)-active region, leads to significant suppression of carrier leakage at elevated temperatures of 90–100 °C. Threshold current densities of only 390 and 440 A/cm2 was achieved for InGaAsN QW lasers (Lcav=2000 μm) with GaAs0.85P0.15-direct barriers at temperature of 80 and 90 °C, respectively.
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