Experimental Evidence of a Gaussian Roughness atSi(111)/SiO2Interfaces

Abstract

With a plan-view transmission electron microscope technique to unambiguously image the {open_quotes}physical{close_quotes} interface position between Si and furnace grown SiO{sub 2} layers, we first show experimental evidence that the height-height autocorrelation function is a Gaussian function at Si(111)/SiO{sub 2} interfaces. With a simple kinetic model, we have found that this Gaussian autocorrelation function is a natural consequence of step motion during silicon oxidation. This result puts interfacial roughness measurements on a firmer foundation in the future. {copyright} {ital 1998} {ital The American Physical Society }