Abstract
Using the modulated photocurrent method we studied the deep defect creation and annealing kinetics of amorphous silicon-germanium alloys with Ge fractions below 10 at. %. Two distinct defect bands are observed corresponding to neutral Si and neutral Ge dangling bonds. During annealing the Si and Ge defects directly compete with each other, implying a global reconfiguration mechanism. The creation kinetics indicate the usual nearly 1/3 power dependence on exposure time for the total deep defect density, but not for either type individually. The details of the Ge vs Si defect creation is used to discriminate between some proposed defect creation models.
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