Abstract
The microwave small-signal and high frequency noise performance of AlGaAs/GaAs HEMTs have been assessed, both with and without illumination at room temperature. The measurements were carried out over the bias range where the photo-induced kink in the DC output characteristics is observed. The results obtained have been compared with our previously reported kink phenomenon in the output characteristics of these devices. The postulated electron trapping mechanism is confirmed as the cause of the kink
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