Abstract
Temperature dependent capacitance–voltage (C-V) and conductance-voltage (G-V) measurements were performed to obtain activation energies (EA) for weak inversion C-V humps and parallel conductance peaks in Al2O3/InGaAs and Si3N4/InGaAs gate stacks. Values of 0.48 eV (slightly more than half of the band gap of the studied In0.53Ga0.47As) were obtained for EA of both phenomena for both gate dielectrics studied. This indicates an universal InGaAs behavior and shows that both phenomena are due to generation-recombination of minority carriers through near midgap located interface states. The C-V hump correlates with the interface states density (Dit) and can be used as a characterization tool for dielectric/InGaAs systems.
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