Abstract
We investigated the site preference for Mn atoms in ferromagnetic (Zn,Mn,Sn)As2 thin films grown by molecular beam epitaxy. All the (Zn,Mn,Sn)As2 samples used exhibited ferromagnetism with Curie temperatures above room temperature. The chemical compositions of the (Zn,Mn,Sn)As2 thin films were measured by electron probe microanalysis. Under the present growth conditions, increasing the Mn concentration in (Zn,Mn,Sn)As2 reduced the Sn content almost three times more than the Zn content. This result reveals for the first time that Mn substitution in (Zn,Mn,Sn)As2 thin films prefers Sn sites over Zn sites. To explain the carrier-mediated ferromagnetism of (Zn,Mn,Sn)As2 with p- or n-type conductivities, we discuss the possibility that Mn3+ substitution occurs at both Zn and Sn sites in addition to Mn2+ and Mn4+ substitutions.
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