Abstract
Fourier-transform infrared spectroscopy on the charge-state-dependent local modes of the off-center substitutional oxygen impurity in GaAs has revealed an inverted ordering of the two gap levels. The metastable one-electron state shows the characteristic disproportionation into the zero- and the two-electron state. From the thermally activated decay of the local mode lines and the observed threshold energies for the photoionization cross sections ${\mathrm{\ensuremath{\sigma}}}_{\mathit{p}}^{0}$(1) and ${\mathrm{\ensuremath{\sigma}}}_{\mathit{n}}^{0}$(2), binding energies of 0.15 and 0.62 eV for the first and the second electron, respectively, are deduced.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
