Experimental Evaluation of SiC Mosfets in Comparison to Si IGBTs in a Soft-Switching Converter

Abstract

Silicon-carbide (SiC) mosfet s have shown superior characteristics to Si IGBTs, bringing in significant performance improvement such as enabling more compact, higher efficiency converters that are not feasible with conventional Si IGBTs. Currently, there is a lack of systematic and conclusive investigation into soft-switching inverters using SiC mosfet s in comparison to Si IGBTs. This article, therefore, presents a comparative evaluation of a soft-switching inverter, i.e., the auxiliary resonant commutated pole inverter (ARCPI) using SiC mosfet s or Si IGBTs. The switching transition, switching device current stress, neutral point ripple current, electromagnetic interference (EMI), efficiency, and cost are compared on identical ARCPI setups, i.e., with the same printed circuit boards and under identical driving conditions (gate drivers). Experimental results show that the ARCPI using SiC mosfet s has better performance than that using Si IGBTs due to its faster switching speed. First, the ARCPI using SiC mosfet s performs full zero-voltage switching and the switching transition behavior is more predictable. Unlike Si IGBTs, SiC mosfet s have no turn- off tail current and forward voltage drop during switching transitions. Second, the ARCPI using SiC mosfet s endures less current stress and smaller ripple current in dc-link capacitors. Third, the ARCPI using SiC mosfet s exhibits better EMI performance and higher efficiency. Specifically, a maximum 20 dB μ V harmonic reduction can be achieved around 800 kHz and a 3.1% improvement in efficiency can be achieved at 6 kW.