Experimental evaluation of Gd3Al2Ga3O12:Ce (GAGG:Ce) single crystals coupled to a silicon photomultiplier (SiPM) under high gamma ray irradiation conditions

Abstract

Cerium (Ce) ion doped scintillators are of high interest in Medical Imaging systems and radiation monitoring devices, due to their very fast response and very good emission characteristics. In this study, a series of measurements regarding the energy resolution, photofraction, sensitivity, as well as the figure of merit, of Gd3Al2Ga3O12:Ce (GAGG:Ce) scintillator crystals, is presented. All GAGG:Ce crystals have a surface area of 3x3 mm2 with varying thicknesses, from 4 up to 20 mm (4, 5, 6, 8, 10, 15 and 20 mm). These crystals were exposed to γ radiation, using two different radioactive sources: 137Cs (0.662 MeV) and 60Co (1.173 MeV and 1.332 MeV). Each crystal was measured individually and was optically coupled to a KETEK PM3350 SiPM, an optical sensor with high gain, suitable to operate in room temperature. The digitization of the pulses was accomplished using CAEN DT5720 desktop digitizer and its corresponding digital pulse processing (DPP) firmware. Each measurement was performed in a light-tight box and had duration of 30 min. The best energy resolution value was measured for the GAGG:Ce crystal with dimensions 3x3x15mm3, equal to 3.9% at 1.332 MeV. Results were evaluated and compared to previous published data.