Experimental estimation of oxidation-induced Si atoms emission on Si(001) surfaces

Shuichi Ogawa,Yuji Takakuwa,Jiayi Tang

doi:10.1063/1.4929332

Abstract

Kinetics of Si atoms emission during the oxidation of Si(001) surfaces have been investigated using reflection high energy electron diffraction combined with Auger electron spectroscopy. The area ratio of the 1 × 2 and the 2 × 1 domains on a clean Si(001) surface changed with the oxidation of the surface by Langmuir-type adsorption. This change in the domain ratio is attributed to the emission of Si atoms. We can describe the changes in the domain ratio using the Si emission kinetics model, which states that (1) the emission rate is proportional to the oxide coverage, and (2) the emitted Si atoms migrate on the surface and are trapped at SB steps. Based on our model, we find experimentally that up to 0.4 ML of Si atoms are emitted during the oxidation of a Si(001) surface at 576 °C.

Highlights

It is well known that the oxidation of a Si surface causes large interfacial strain due to volume expansion,[1] which leads to the generation of defects in the form of emitted Si atoms and vacancies.[2,3,4,5] It has been reported that these defects cause an increase in dopant diffusion[2] and oxidation-induced stacking faults.[3]
Kinetics of Si atoms emission during the oxidation of Si(001) surfaces have been investigated using reflection high energy electron diffraction combined with Auger electron spectroscopy
We can describe the changes in the domain ratio using the Si emission kinetics model, which states that (1) the emission rate is proportional to the oxide coverage, and (2) the emitted Si atoms migrate on the surface and are trapped at SB steps

Summary

Introduction

It is well known that the oxidation of a Si surface causes large interfacial strain due to volume expansion,[1] which leads to the generation of defects in the form of emitted Si atoms and vacancies.[2,3,4,5] It has been reported that these defects cause an increase in dopant diffusion[2] and oxidation-induced stacking faults.[3]. In order to clarify the influence of the emitted Si atoms on the oxide growth, it is necessary to determine the quantity of Si atoms emitted into the oxide

Methods

Results

Conclusion