Abstract
Angle resolved synchrotron radiation photoemission spectroscopy (ARPES) was used to determine the valence band structure of CdTe(110). CdTe surfaces of high structural quality were obtained by homoepitaxial MBE. The experimental valence band dispersion along the ΓKX direction was determined by using a direct transition model to free-electron-like final state bands. The experimental band structure agrees well with pseudopotential calculations if the final state band is lowered by a muffin tin potential of E0 = 5.7 eV. A photoemission structure ~ 1 eV below the Fermi level which was previously assigned to surface states is related to the emission from the top of the valence band at Γ8. No evidence was found for surface state emission at normal as well as off-normal emission at high symmetry points of the surface Brillouin zone.
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