Abstract
Liquid-phase epitaxial (LPE) growth of Hg1−xCdxTe alloys from Hg-rich solutions has not been studied extensively owing to the relatively low solubilities of Cd and Te in this solvent system and the high vapor pressure of Hg. A vertical “infinite-melt” reflux LPE system is described which assures equilibrium between the liquid and vapor phases of Hg and is operable to 10 atm pressure, Using this system, the liquidus surface of the Hg-CdTe-HgTe phase field has been determined by solubility measurements of Te and CdTe in Hg for the 340°C to 520°C temperature range. Solidus isoconcentration lines in the range of 0.2 < × < 0.6 have been obtained by measurements of X as a function of depth for layers grown on single-crystal 〈111〉 oriented CdTe substrates. The experimental data thus obtained are in good agreement with theory. The general characteristics of LPE growth from Hg-rich solutions are discussed.
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