Abstract

Dramatically improved performance has recently been theoretically predicted for strained-layer quantum well lasers1-3 compared with unstrained quantum well or bulk lasers. Among the expected characteristics are enhanced differential gain (dg/dN), increased carrier dependence of the real part of the refractive index (dn/dN), and a reduced linewidth enhancement factor a. Extremely high bandwidths (up to 90 GHz)1 have been predicted based on theoretical estimates of enhanced dg/dN. Also, the predicted reduction in a may lead to lasers with substantially reduced chirp and narrowed linewidths, while the predicted increase in dn/dN could yield single-longitudinal-mode lasers with extended tuning ranges.

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