Abstract
The spin splitting of conduction band electrons in inversion-asymmetric InGaAs/InP quantum wells (QWs) is studied by Shubnikov-de Haas measurements combining the analysis of beating patterns and coincidence measurements in doubly tilted magnetic fields. The method allows us to determine the absolute values of the Rashba and linear Dresselhaus spin–orbit interaction (SOI) coefficients, their relative sign and the full Landé g-tensor. This is achieved by analyzing the anisotropy of the beat node positions with respect to both polar and azimuthal angles between the magnetic field direction and the QW normal. We show that the SOI is dominated by a large Rashba coefficient together with a linear Dresselhaus coefficient that is 10% of the Rashba coefficient. Their relative sign is found to be positive. The g-tensor is found to have a marked out-of-plane anisotropy and a smaller but distinct in-plane anisotropy due to SOI.
Highlights
Spin related effects in semiconductor two-dimensional electron systems (2DESs) have been a subject of intense research in both fundamental physics and research aimed towards novel spintronic devices [1]
In addition to the anisotropic Zeeman effect relevant for spin manipulation by external magnetic fields [2], in particular the spin–orbit interaction (SOI) effects in 2DESs are of interest
The large interest in R-SOI effects in 2DESs is motivated on the one hand by the possibility to manipulate spins by electrical fields [6]. Both R-SOI and D-SOI can lead to spin decoherence which has to be considered for any device working with spin information [7]
Summary
Spin related effects in semiconductor two-dimensional electron systems (2DESs) have been a subject of intense research in both fundamental physics and research aimed towards novel spintronic devices [1]. In addition to the anisotropic Zeeman effect relevant for spin manipulation by external magnetic fields [2], in particular the spin–orbit interaction (SOI) effects in 2DESs are of interest. Both R-SOI and D-SOI can lead to spin decoherence which has to be considered for any device working with spin information [7]. This insight has led to concepts based on the interplay of R-SOI and D-SOI [8]. The unambiguous separation and quantification of all these effects in a given electron system is of utmost importance In asymmetric heterostructures lacking inversion symmetry of the host crystal all of these effects are present simultaneously
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