Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs

O Weber,J Mitard,L Militaru,A.-M Papon,B Guillaumot,T Ernst,S Delconibus,J.-M Hartmann,F Andricu,G Ghibaudo,M Casse,C Leroux,F Martin,J.-F Damlencourt,D Lafond,F Ducroquet,K Romanjek,L Thevenod

doi:10.1109/iedm.2004.1419316

Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs

O Weber, J Mitard + Show 16 more

https://doi.org/10.1109/iedm.2004.1419316

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Publication Date: Dec 13, 2004

Citations: 12

Affiliation: Institut National des Sciences Appliquées de Lyon, Direction de la Recherche Technologique, CEA Grenoble, Atomic Energy and Alternative Energies Commission, STMicroelectronics (France), Institut de Microélectronique, Electromagnétisme et Photonique

#TiN Gate Stacks #Remote Coulomb Scattering + Show 8 more

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Abstract

We demonstrate by an extensive experimental study of HfO/sub 2//TiN and SiO/sub 2//TiN gate stacked-transistors compared with the SiO/sub 2//poly-Si reference, that the hole mobility is mainly degraded by the surface roughness (SR) linked to the presence of TiN. We thus propose high mobility SiGe or SiGe:C surface channel pMOSFETs with HfO/sub 2//TiN gate stacks using an adequate valence band engineering near the dielectric/channel interface (up to 100% hole mobility enhancement at E/sub eff/ = 1 MV/cm). On the other hand, the electron mobility with HfO/sub 2//TiN gate stacks is reduced by remote Coulomb scattering (RCS).

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