Abstract
In this article, we report the first experimental demonstration of the three-phase-shifted (3PS) DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp (REC) technique. The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser. Compared with the quarter-wave-phase shift (QWS) DFB semiconductor laser, the 3PS DFB semiconductor laser shows better single-longitude-mode (SLM) property even at high injection current with high temperature. However, it only changes the μm-level sampling structures but the seed grating is uniform using the REC technique. Therefore, its fabrication cost is low.
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