Abstract

This paper deals with the design and fabrication of a monolithically integrated over-voltage sensor together with high voltage IGBTs. This solution will be of interest in harsh environment applications such as power modules for traction. First, the anode voltage sensor concept is introduced and an initial experimental validation on 600 V insulated gate bipolar transistor (IGBT) devices is provided. Then, guidelines for the design of a 3.3 kV IGBT including the proposed anode voltage sensor are pointed out together with its process fabrication. Finally, experimental results on fabricated 3.3 kV IGBTs are presented and compared with simulated expected behaviour.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.