Abstract
We designed and fabricated a π equivalent phase-shifted sampled Bragg grating (SBG) semiconductor laser with a controlled distributed phase shift. The phase shift is equivalently realized with reconstruction-equivalent-chirp (REC) technique. The laser is divided into three sections with the same length. By injecting different currents into the side and middle sections, a distributed phase shift can be introduced. The lasing wavelength can be continuously tuned by the injection currents. In our experiment, when the total current keeps 130 mA, the lasing wavelength can be continuously tuned by 1.2 nm. During the tuning, the side mode suppression ratio keeps above 40 dB and the output power varies only 1.3 dB. Therefore, the proposed method provides an alternative solution for the multiwavelength laser arrays in dense wavelength-division multiplexing (DWDM) systems.
Highlights
Semiconductor lasers have been widely applied as light sources in optical communication owing to its compact structure, low power consumption, low production cost, and high quantum efficiency [1]
A distributed phase shift (DPS) is introduced into the studied laser
By injecting different currents into its middle and side sections, a DPS is introduced into the studied laser
Summary
Semiconductor lasers have been widely applied as light sources in optical communication owing to its compact structure, low power consumption, low production cost, and high quantum efficiency [1]. Distributed feedback (DFB) semiconductor lasers are one kind of crucial light sources It can lase at a stable wavelength with a good single-mode property [2]. In an actual DWDM system, the DFB laser array is a good candidate for the multiwavelength source, owing to its stable lasing wavelengths [6]. It is difficult to fabricate a DFB laser array with such wavelength precision. To solve this problem, it is reported that each DFB laser is typically fabricated attached with an individual thin-film heater, which tunes the lasing wavelength thermally [7]. Our experimental results show that, when the total current keeps 130 mA, the lasing wavelength can be tuned continuously by 1.2 nm. The SMSRs keep above 40 dB and the output power fluctuates only 1.3 dB
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