Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs

Abstract

By using 4H-SiC packaged Charge-Balanced (CB) MOSFET, we have experimentally demonstrated a 3.3kV 4H-SiC common-drain bidirectional (BD) CB power MOSFET and measured its static and dynamic characteristics compared to its unidirectional counterpart. We show that the BD CB MOSFET conducts and blocks at the first and third quadrants with the appropriate gate bias with an on-state resistance double its unidirectional counterpart, while its switching energies are 12 (19) and 34 (12) mJ/cm2 for BD CB MOSFET (UD CB MOSFET).