Abstract

The paper presents a comparative study of two solar string inverters based on the Quasi-Z-Source (QZS) network. The first solution comprises a full-SiC two-level QZS inverter, while the second design was built based on a three-level neutral-point-clamped QZS inverter with Silicon based Metal–Oxide–Semiconductor Field-Effect Transistors (Si MOSFETs). Several criteria were taken into consideration: the size of passive elements, thermal design and size of heatsinks, voltage stress across semiconductors, and efficiency investigation. The Photovoltaic (PV)-string rated at 1.8 kW power was selected as a case study system. The advantages and drawbacks of both solutions are presented along with conclusions.

Highlights

  • Continuous development and improvements of Photovoltaic (PV) system designs along with related technologies, such as Wide Bandgap (WBG) GaN/SiC devices, Digital Signal Processor (DSP)and Field-Programmable Gate Array (FPGA)-based control units have gradually decreased their costs

  • Efficiency, which is over 96% for both topologies (2L Quasi-Z-Source Inverter (QZSI) and 3L NPC QZSI)

  • The value of the weighted California Energy Commission (CEC) efficiency was obtained by assigning a probable percentage of time the inverter resides at a certain operating point

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Summary

Introduction

Continuous development and improvements of Photovoltaic (PV) system designs along with related technologies, such as Wide Bandgap (WBG) GaN/SiC devices, Digital Signal Processor (DSP)and Field-Programmable Gate Array (FPGA)-based control units have gradually decreased their costs This allows new solutions featuring high efficiency and easy implementation which make them commercially attractive. The combination of the QZSI with the Three-Level (3L) Neutral-Point-Clamped (NPC) inverter has created a new promising topology, described in detail in Reference [6] It features certain advantages such as low voltage stress on the power switches, single-stage buck–boost operation, continuous input current, short-circuit immunity, and low total harmonic distortion of the output voltage and current. It should be mentioned that different solutions have been used to reach certain installed goals and satisfy some specific requirements

System Parameters and Specifications
Description
Selection of Passive Components
Selection of Semiconductor Devices and Heatsinks
Experimental Setup and Tested Prototypes Description
Theonoperation to 360
Operation waveforms
Evaluation
Efficiency Evaluation
Evaluation of Temperature Behavior of Semiconductors and Heatsinks
11. Thermal images in the nominal operation mode
Comparative
12. Comparative diagram for the for
Conclusions

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