Abstract
Simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current-voltage (I-V), capacitance-voltage (C-V), S-parameter, and 1.9-GHz load-pull characteristics and explains differences between them. The SOI LDMOSFET performance is shown to be largely similar to the performance of an equivalent bulk silicon LDMOSFET, but there are important differences. The SOI LDMOSFET has moderately lower on-state breakdown voltage due to increased body resistance. It also has significantly improved power-added efficiency due to reduced parasitic pad losses.
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