Abstract
Experimental Comparison of Rapid Large-area Direct Electron Beam Exposure Methods with Plasmonic Devices
Highlights
Electron beam lithography (EBL) is an essential research and development tool for recent very large scale integrated circuits (VLSI), nano- to micro-electromechanical systems (NEMS/ MEMS), nanophotonics, surface plasmonic structures, and metamaterials
The hole patterns were transferred to Al by inductively coupled plasma reactive ion etching (ICP-RIE, ULVAC NE-550) under the following conditions: an ICP coil radio frequency (RF) power of 400 W, a substrate bias power of 50 W, 15 sccm Cl2 gas, 15 sccm BCl3 gas, an etching pressure of 0.5 Pa, and heat transfer tape pasted on a silicon carrier wafer
O-sq-variable-shaped beam (VSB) [Fig. 9(a), 181 nm] and O-sq-VSB with PEC (VSBPEC) [Fig. 9(b), 180 nm], and Tri-hex-VSBPEC [Fig. 10(b), nm] and Tri-hex-CP with PEC (CPPEC) [Fig. 10(d), nm] were similar. These results show that the agreement of optical spectra can be a good indicator for verifying that nanopatterns are identically fabricated
Summary
Electron beam lithography (EBL) is an essential research and development tool for recent very large scale integrated circuits (VLSI), nano- to micro-electromechanical systems (NEMS/ MEMS), nanophotonics, surface plasmonic structures, and metamaterials. To bridge the gap from research to industrial use, manufacturers require both high throughput and high resolution for lithography. If a high-throughput EBL technology with wafer-level patterning is achieved, a new production scheme with a short turnaround time and a high degree of design flexibility will be realized. Towards this end, high-throughput EBL methods have been developed. One method is the variable-shaped beam (VSB) method.
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