Abstract
Poly-Si thin-film transistors (TFT's) have a large off-state current that is unacceptable for pixel driver application. To quickly establish an effective solution to reduce the off-state current, systematic comparison and clarification of the mechanisms of off-state current are still insufficient. We will concentrate on an experimental comparison of off-state current mechanisms between low-temperature-processed (LTP) and high-temperature-processed (HTP) poly-Si TFT devices. Since all the off-state currents are found to be divided into three regions in LTP and HTP poly-Si TFT's, they are attributable to a resistive current in region I (low gate bias), pure thermal generation in region II (low drain bias) and Frenkel-Poole emission in region III (high gate bias, drain bias).
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